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| EM MICROELECTRONIC - MARIN SA EM5060 Low Voltage CMOS Driver Circuit Features * * * * * * * Four low resistance output drivers for bipolar or unipolar watch stepping motors. Low transversal transition current. Very low current consumption: 0.1 A at 25C. Two different output resistances programmable by metal mask. Wide power supply voltage range: 1.1 to 3.5 V. Tristate input for applications as fast bus driver. ESD and latch-up protections on input and output pads. Functional Diagram Rch =200 M OUT1 VDD EM5060 V1 VSS OUT2 OUT3 Rch =200 M OUT4 Description The EM5060 (previously named H5060) is a low power integrated circuit in HCMOS Silicon Gate Technology designed to drive bipolar or unipolar stepping motors. This device contains four identical and independent noninverting circuits which can be connected by metal mask programation so as to obtain two identical non-inverting circuits with a lower resistance output. Each buffer is driven by a special cell which dephases the P and N transistor signal input, for a minimization of the transversal transition current. A tristate input HIZ, with internal pulldown resistor provides the high impedance state of the four outputs. HIZ IN1 IN2 IN3 IN4 Rch =200 M OUT1 VDD VSS OUT2 EM5060 V2 Application * * * Motor driver for watch/clock application Bus drivers LED driver HIZ IN1 IN2 Fig. 1 Pin Assignment Pad OUT4 OUT3 OUT2 OUT1 VDD HIZ IN1 IN2 IN3 IN4 VSS Function Output buffer n4 Output buffer n3 Output buffer n2 Output buffer n1 Positive supply voltage Tri state input Input buffer n1 Input buffer n2 Input buffer n3 Input buffer n4 Negative supply voltage VDD OUT1 OUT2 OUT3 OUT4 VDD NC OUT1 OUT2 NC HIZ EM5060 V1 HIZ EM5060 V2 IN1 IN2 IN3 IN4 VSS NC IN1 IN2 NC VSS Fig. 2 Copyright 2002, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com EM5060 Absolute Maximum Ratings Parameter Symbol Min Typ Max Unit Handling Procedures 5.5 VDD+0.3 +120 V V C Table 1 Supply Voltage Voltage at remaining pin Storage temperature VDD Vpin Tstore -0.3 VSS-0.3 -55 This device contains circuitry to protect the terminals against damage due to high static voltages or electrical fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than minimum rated voltages to this circuit. Operating Conditions Parameter Symbol Min Typ Max Units Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure to conditions beyond specified electrical characteristics may affect device reliability or cause malfunction. Operating temperature Topr -20 +70 C Table 3 Recommended Operating Conditions Parameter Symbol Value Units Ambient temperature Motor resistance Positive supply Negative supply Supply source resistance T Rch VDD VSS RI 25 200 1.55 0.0 10 C Ohms V V Ohms Table 2 Electrical and Switching Characteristics at recommended operating conditions (valid unless otherwise specified) Parameter Supply voltage Standby current Symbol VDD Conditions Operating Imot = 0 IN1, IN2, IN3, IN4 at VDD or VSS HIZ at VSS or open VDD = 1.2 V VIL = VSS VIH = VDD Overall voltage range HIZ at VDD Rch = 200 ,VDD = 1.2 V Version V1 Version V2 VDD = 1.50 V Version V1 Version V2 VDD =3.0 V Version V1 Version V2 VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF Min. 1.1 Typ. 1.55 Max. 3.5 100 Unit V nA Inputs Pulse width tWL tWH VIL VIH IHIZ 1 1 VDD-0.3 0.5 VSS VDD 2 0.4 5 Voltage HIZ Input Current Outputs Motor Output Current ms ms V V A IOUT 4.3 4.8 6.0 6.4 13.0 13.3 5.0 6.6 13.5 5 5 3 3 100 100 100 100 mA mA mA mA mA mA s s s s Table 4 Timing Characteristics Propagation delay Transition time tPHL tPLH tTHL tTLH Copyright 2002, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com EM5060 Timing Waveforms IN t VGP t VGN t OUT t : HIGH IMPEDANCE OUTPUT Fig. 3 Block Diagram Version V1 Version V2 IN1 Anti-current inverter OUT1 IN1 Anti-current inverter OUT1 IN2 Anti-current inverter OUT2 IN2 Anti-current inverter OUT2 IN3 Anti-current inverter OUT3 IN4 Anti-current inverter OUT4 Fig. 4 Copyright 2002, EM Microelectronic-Marin SA 3 www.emmicroelectronic.com EM5060 Functional Description VDD In VGP ANTI-CURRENT VGN INVERTER Out VSS Fig. 5 Chip Information VDD X=19, Y=980 VDD X=19, Y=98 OUT4 X=1066 HIZ X=0, Y=508 EM5060 V1 H5060 v1 HIZ X=0, Y=508 EM5060 V2 H5060 v2 VSS X=1082, Y=0 IN2 X=312 IN3 X=590 IN4 X=837 IN2 X=590 NOTE: The origin (0,0) is the lower left coordinate of center pads The lower left corner of the chip shows distances N.C. Not connected All dimensions in microns Fig. 6 Ordering Information EM5060 is available in two versions: * Version V1 contains four input/outputs (INPUTS = IN1, IN2, IN3, IN4 ; OUTPUTS = OUT1, OUT2, OUT3, OUT4). * Version V2 contains two input/outputs (INPUTS = IN1, IN2 ; OUTPUTS = OUT1, OUT2). When ordering, please specify the complete Part Number below. Part Number EM5060V1WP11 EM5060V1WS11 EM5060V2WP11 EM5060V2WS11 Version V1 V1 V2 V2 Die & Delivery Form Die in waffle pack, 11 mils thickness Sawn wafer, 11 mils thickness Die in waffle pack, 11 mils thickness Sawn wafer, 11 mils thickness EM Microelectronic-Marin SA cannot assume responsibility for use of any circuitry described other than circuitry entirely embodied in an EM Microelectronic-Marin SA product EM Microelectronic-Marin SA reserves the right to change the specifications without notice at any time. You are strongly urged to ensure that the information given has not been superseded by a more up to date version. (c) 2002 EM Microelectronic-Marin SA, 05/02 Rev. B/481 Copyright 2002, EM Microelectronic-Marin SA 4 www.emmicroelectronic.com IN1 X=312 IN1 X=65 NC X=837 NC X=65 X=-160 Y=-171 X=-160 Y=-171 VSS X=1082, Y=0 NC X=1066 OUT1 X=294 OUT2 X=541 OUT3 X=819 NC X=294 OUT1 X=541 OUT2 X=819 |
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